硅通孔检测结构及检测方法

Silicon through hole detection structure and detection method

Abstract

一种硅通孔检测结构及检测方法,所述硅通孔检测结构包括:半导体基底,位于所述半导体基底内的硅通孔;位于所述半导体基底和硅通孔表面的层间介质层;位于所述层间介质层表面的检测金属层,所述检测金属层位于所述硅通孔的正上方。利用所述检测电压检测所述硅通孔和检测金属层之间的击穿电压,所述检测金属层的电阻值,从而判断所述硅通孔表面是否存在铜突起,检测敏感、方便。
Provided are a silicon through hole detection structure and a detection method. The silicon through hole detection structure comprises a semiconductor substrate, a silicon through hole located in the semiconductor substrate, an interlamination medium layer located on the semiconductor substrate and the surface of the silicon through hole and a detection metal layer located on the surface of the interlamination medium layer. The detection metal layer is located over the silicon through hole. Detection voltage is used to detect puncture voltage between the silicon through hole and the detection metal layer and a resistance value of the detection metal layer, so that whether copper protrusions exist on the surface of silicon through hole can be judged. The detection is sensitive and convenient.

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Patent Citations (9)

    Publication numberPublication dateAssigneeTitle
    CN-101281898-AOctober 08, 2008中芯国际集成电路制造(上海)有限公司栅介质层完整性的测试结构、其形成方法及其测试方法
    CN-101556944-AOctober 14, 2009台湾积体电路制造股份有限公司形成穿透硅通孔的结构和工艺
    CN-101771020-AJuly 07, 2010台湾积体电路制造股份有限公司Through-silicon via with scalloped sidewalls
    CN-102053207-AMay 11, 2011海力士半导体有限公司Circuit and method for testing semiconductor apparatus
    CN-102169870-AAugust 31, 2011索尼公司Semiconductor device and penetrating electrode testing method
    JP-H07245401-ASeptember 19, 1995Nippondenso Co Ltd, 日本電装株式会社縦型半導体装置の特性測定方法
    JP-S5762533-AApril 15, 1982Fujitsu LtdManufacture of semiconductor device
    US-2011194857-A1August 11, 2011Avenson Brad D, Garcia Caesar T, Neal Allen Hall, Abidin Guclu OnaranSignal Processing Within an Optical Microphone
    US-6872583-B1March 29, 2005Advanced Micro Devices, Inc.Test structure for high precision analysis of a semiconductor

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    Publication numberPublication dateAssigneeTitle