利用预稳定等离子体的工艺的溅镀方法

Method for sputtering for processes with a pre-stabilized plasma

Abstract

描述一种沉积材料的层于基板上的方法。此方法包括当基板未暴露于等离子体时,点燃用于材料沉积的溅镀靶材的等离子体;维持等离子体至少直到基板暴露于等离子体来沉积材料于基板上;以及沉积材料于基板上,其中基板为了静态沉积工艺而定位。
A method of depositing a layer of a material on a substrate is described. The method includes igniting a plasma of a sputter target for material deposition while the substrate is not exposed to the plasma, maintaining the plasma at least until exposure of the substrate to the plasma for deposition of the material on the substrate, exposing the substrate to the plasma by moving at least one of the plasma and the substrate, and depositing the material on the substrate, wherein the substrate is positioned for a static deposition process.

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    Title
    叶志镇等: "《半导体薄膜技术与物理》", 30 September 2008, article "溅射技术", pages: 59

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